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onsemi Type N-Channel MOSFET, 135 A, 150 V N, 8-Pin DFN NTMTS6D0N15MC

RS stock no.:: 229-6487
Mfr. Part No.:: NTMTS6D0N15MC
Manufacturer:: onsemi

onsemi Type N-Channel MOSFET, 135 A, 150 V N, 8-Pin DFN NTMTS6D0N15MC

Image representative of range

Bulk discount available

Subtotal (1 pack of 2 units)*

R 220,34

(exc. VAT)

R 253,40

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 2,970 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
2 - 8	R 110.17	R 220.34
10 - 98	R 107.415	R 214.83
100 - 248	R 104.195	R 208.39
250 - 498	R 100.025	R 200.05
500 +	R 96.025	R 192.05

*price indicative

RS stock no.:: 229-6487
Mfr. Part No.:: NTMTS6D0N15MC
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	135A
	Maximum Drain Source Voltage Vds	150V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.4mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	245W
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	8.5mm
	Length	8.1mm
	Width	1.2 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 135A
	Maximum Drain Source Voltage Vds 150V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.4mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 245W
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 8.5mm
	Length 8.1mm
	Width 1.2 mm
	Automotive Standard No

Datasheet - NTMTS6D0N15MC

The ON Semiconductor N-Channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

Minimize conduction losses

High peak current and low parasitic inductance

Offers a wider design margin for thermally challenged applications

Reduces switching spike

onsemi Type N-Channel MOSFET, 135 A, 150 V N, 8-Pin DFN NTMTS6D0N15MC

FREE delivery for orders over R 1,500.00

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