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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	135A
	Maximum Drain Source Voltage Vds	150V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.4mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	58nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	245W
	Maximum Operating Temperature	175°C
	Height	8.5mm
	Standards/Approvals	No
	Length	8.1mm
	Width	1.2 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 135A
	Maximum Drain Source Voltage Vds 150V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.4mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 58nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 245W
	Maximum Operating Temperature 175°C
	Height 8.5mm
	Standards/Approvals No
	Length 8.1mm
	Width 1.2 mm
	Automotive Standard No

Datasheet - NTMTS6D0N15MC

The ON Semiconductor N-Channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.

Minimize conduction losses

High peak current and low parasitic inductance

Offers a wider design margin for thermally challenged applications

Reduces switching spike

onsemi Type N-Channel MOSFET, 135 A, 150 V N, 8-Pin DFN

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