onsemi NTK Type P-Channel MOSFET, 263 A, 30 V P, 8-Pin SO-8 NTMFS002P03P8ZT1G
- RS stock no.:
- 229-6465
- Mfr. Part No.:
- NTMFS002P03P8ZT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 257,79
(exc. VAT)
R 296,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,500 unit(s) shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 51.558 | R 257.79 |
| 10 - 95 | R 50.27 | R 251.35 |
| 100 - 245 | R 48.762 | R 243.81 |
| 250 - 495 | R 46.812 | R 234.06 |
| 500 + | R 44.94 | R 224.70 |
*price indicative
- RS stock no.:
- 229-6465
- Mfr. Part No.:
- NTMFS002P03P8ZT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTK | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 138.9W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 217nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.3mm | |
| Length | 6.3mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTK | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 138.9W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 217nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.3mm | ||
Length 6.3mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET has ultra low on state resistance. It has 226 A of drain current. It is used in power load switch and battery management.
Improve system efficiency
Space saving
Excellent thermal conduction
Pb-free
Halogen free/BFR free
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