Infineon IPZ Type N-Channel MOSFET, 40 A, 40 V Enhancement, 8-Pin PQFN IPZ40N04S55R4ATMA1
- RS stock no.:
- 229-1852
- Mfr. Part No.:
- IPZ40N04S55R4ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
R 184,755
(exc. VAT)
R 212,475
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 12.317 | R 184.76 |
| 30 - 75 | R 12.009 | R 180.14 |
| 90 - 225 | R 11.649 | R 174.74 |
| 240 - 465 | R 11.183 | R 167.75 |
| 480 + | R 10.735 | R 161.03 |
*price indicative
- RS stock no.:
- 229-1852
- Mfr. Part No.:
- IPZ40N04S55R4ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPZ | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 1.05mm | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPZ | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 1.05mm | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level MOSFET used for automotive applications. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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