Infineon IPZ Type N-Channel MOSFET, 40 A, 40 V Enhancement, 8-Pin PQFN IPZ40N04S58R4ATMA1
- RS stock no.:
- 217-2589
- Mfr. Part No.:
- IPZ40N04S58R4ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 202,18
(exc. VAT)
R 232,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 14,900 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 10.109 | R 202.18 |
| 40 - 80 | R 9.857 | R 197.14 |
| 100 - 220 | R 9.561 | R 191.22 |
| 240 - 480 | R 9.179 | R 183.58 |
| 500 + | R 8.812 | R 176.24 |
*price indicative
- RS stock no.:
- 217-2589
- Mfr. Part No.:
- IPZ40N04S58R4ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | IPZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 34W | |
| Typical Gate Charge Qg @ Vgs | 13.7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series IPZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 34W | ||
Typical Gate Charge Qg @ Vgs 13.7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 40V, N-Ch, 8.4 mΩ max, Automotive MOSFET, S3O8, OptiMOS™-5.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Normal Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Related links
- Infineon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S58R4ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S55R4ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 BSZ034N04LSATMA1
- Infineon N-Channel MOSFET 60 V, 8-Pin PQFN 3 x 3 IAUZ40N06S5N050ATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S5L4R8ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 FL BSZ024N04LS6ATMA1
- Infineon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 FL BSZ021N04LS6ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 BSZ110N08NS5ATMA1