Name: Infineon Dual HEXFET 2 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin PQFN
Brand: Infineon
SKU: 229-1739
Price: 20.89 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	40nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	50W
	Transistor Configuration	Dual
	Maximum Operating Temperature	175°C
	Length	5mm
	Standards/Approvals	No
	Width	5.85 mm
	Height	1.2mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 40nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 50W
	Transistor Configuration Dual
	Maximum Operating Temperature 175°C
	Length 5mm
	Standards/Approvals No
	Width 5.85 mm
	Height 1.2mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - AUIRFN8459TR

The Infineon dual n channel HEXFET power MOSFET in a PQFN 5 x 6 L package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.

It is RoHS compliant

It has 175°C operating temperature

It has ultra low on resistance

Infineon Dual HEXFET 2 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin PQFN

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