Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3

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Subtotal (1 pack of 2 units)*

R 165,21

(exc. VAT)

R 189,992

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 82.605R 165.21
10 - 48R 80.54R 161.08
50 - 98R 78.125R 156.25
100 - 248R 75.00R 150.00
250 +R 72.00R 144.00

*price indicative

Packaging Options:
RS stock no.:
228-2987
Mfr. Part No.:
SUM90100E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

72.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 200-V (D-S) MOSFET.

100 % Rg and UIS tested

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