Vishay TrenchFET Type N-Channel MOSFET, 150 A, 200 V Enhancement, 3-Pin TO-263 SUM90100E-GE3

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Subtotal (1 pack of 2 units)*

R 170,33

(exc. VAT)

R 195,88

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 85.165R 170.33
10 - 48R 83.035R 166.07
50 - 98R 80.545R 161.09
100 - 248R 77.325R 154.65
250 +R 74.23R 148.46

*price indicative

Packaging Options:
RS stock no.:
228-2987
Mfr. Part No.:
SUM90100E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Typical Gate Charge Qg @ Vgs

72.8nC

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 200-V (D-S) MOSFET.

100 % Rg and UIS tested

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