Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP
- RS stock no.:
- 225-0579
- Mfr. Part No.:
- IPDQ60R010S7XTMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 750 units)*
R 172 615,50
(exc. VAT)
R 198 507,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 750 - 750 | R 230.154 | R 172,615.50 |
| 1500 - 1500 | R 224.40 | R 168,300.00 |
| 2250 + | R 217.668 | R 163,251.00 |
*price indicative
- RS stock no.:
- 225-0579
- Mfr. Part No.:
- IPDQ60R010S7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPDQ60R010S7 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.35 mm | |
| Height | 21.06mm | |
| Standards/Approvals | No | |
| Length | 15.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPDQ60R010S7 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Width 2.35 mm | ||
Height 21.06mm | ||
Standards/Approvals No | ||
Length 15.1mm | ||
Automotive Standard No | ||
The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Eliminates or reduces heat sinks in solid-state design
Related links
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