Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7AXTMA1

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Subtotal (1 unit)*

R 443,88

(exc. VAT)

R 510,46

(inc. VAT)

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Per unit
1 - 9R 443.88
10 - 99R 432.78
100 - 249R 419.80
250 - 499R 403.01
500 +R 386.89

*price indicative

Packaging Options:
RS stock no.:
225-0578
Mfr. Part No.:
IPDQ60R010S7AXTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

600V

Package Type

HDSOP

Series

IPDQ60R010S7A

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

N

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

318nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

694W

Maximum Operating Temperature

150°C

Length

15.1mm

Standards/Approvals

No

Width

2.35 mm

Height

21.06mm

Automotive Standard

AEC-Q101

The Infineon IPDQ60R010S7A is a high voltage power MOSFET,designed as static switch according to the super junction (SJ) principle. The mosfet combines the experience of the leading SJ MOSFET supplier with high class innovation enabling low RDS (on) in QDPAK package. The S7A series is optimised for low frequency switching and high current. application like circuit breakers.

Minimizes conduction losses

Increases energy efficiency

More compact and easier designs

Lower TCO cost or BOM cost

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