Infineon OptiMOS Type N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2

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Subtotal (1 pack of 5 units)*

R 426,87

(exc. VAT)

R 490,90

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 85.374R 426.87
10 - 95R 83.24R 416.20
100 - 245R 80.742R 403.71
250 - 495R 77.512R 387.56
500 +R 74.412R 372.06

*price indicative

Packaging Options:
RS stock no.:
223-8513
Mfr. Part No.:
IPB100N06S2L05ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS series N-channel MOSFET in D2-PAK package. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

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