ROHM Dual 2 Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT QH8JC5TCR
- RS stock no.:
- 223-6207
- Mfr. Part No.:
- QH8JC5TCR
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 129,16
(exc. VAT)
R 148,53
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 12.916 | R 129.16 |
| 50 - 90 | R 12.593 | R 125.93 |
| 100 - 240 | R 12.215 | R 122.15 |
| 250 - 990 | R 11.726 | R 117.26 |
| 1000 + | R 11.257 | R 112.57 |
*price indicative
- RS stock no.:
- 223-6207
- Mfr. Part No.:
- QH8JC5TCR
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.91Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.8 mm | |
| Height | 0.85mm | |
| Length | 3.3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.91Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.8 mm | ||
Height 0.85mm | ||
Length 3.3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET has TO-3PF package type. It is mainly used for switching.
Fast reverse recovery time (trr)
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating, RoHS compliant
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