Infineon CoolMOS Type N-Channel MOSFET, 11.4 A, 600 V Enhancement, 3-Pin TO-263 IPB65R310CFDAATMA1

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Subtotal (1 pack of 5 units)*

R 89,14

(exc. VAT)

R 102,51

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 17.828R 89.14
10 - 95R 17.382R 86.91
100 - 245R 16.86R 84.30
250 - 495R 16.186R 80.93
500 +R 15.538R 77.69

*price indicative

Packaging Options:
RS stock no.:
222-4660
Mfr. Part No.:
IPB65R310CFDAATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.4A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

310mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

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