Infineon CoolMOS Type N-Channel MOSFET, 11.4 A, 600 V Enhancement, 3-Pin TO-263 IPB65R310CFDAATMA1

Image representative of range

Bulk discount available
View bulk pricing option

Subtotal (1 pack of 5 units)*

R 240,23

(exc. VAT)

R 276,265

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
5 - 5R 48.046R 240.23
10 - 95R 46.844R 234.22
100 - 245R 45.438R 227.19
250 - 495R 43.62R 218.10
500 +R 41.876R 209.38

*price indicative

Packaging Options:
RS stock no.:
222-4660
Mfr. Part No.:
IPB65R310CFDAATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

310mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy