Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1

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Subtotal (1 pack of 15 units)*

R 274,995

(exc. VAT)

R 316,245

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 18.333R 275.00
30 - 75R 17.875R 268.13
90 - 225R 17.339R 260.09
240 - 465R 16.646R 249.69
480 +R 15.98R 239.70

*price indicative

Packaging Options:
RS stock no.:
222-4629
Mfr. Part No.:
BSZ068N06NSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

60V

Package Type

TSDSON

Series

OptiMOS-TM3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.2mm

Length

5.35mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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