ROHM Dual SP8M5 1 Type N, Type P-Channel MOSFET, 3 A, 100 V Enhancement, 8-Pin SOP SP8M51HZGTB
- RS stock no.:
- 222-4384
- Mfr. Part No.:
- SP8M51HZGTB
- Manufacturer:
- ROHM
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 152,42
(exc. VAT)
R 175,285
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 21 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 30.484 | R 152.42 |
| 50 - 95 | R 29.722 | R 148.61 |
| 100 - 245 | R 28.83 | R 144.15 |
| 250 - 995 | R 27.676 | R 138.38 |
| 1000 + | R 26.568 | R 132.84 |
*price indicative
- RS stock no.:
- 222-4384
- Mfr. Part No.:
- SP8M51HZGTB
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SP8M5 | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 6 mm | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SP8M5 | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 6 mm | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
The ROHM SP8M51HZG dual (Nch+Pch) power misfit for switching power supply.
Low on-resistance
Small Surface Mount Package (SOP8)
Pb-free lead plating ; RoHS compliant
Halogen Free
Sn100% plating
AEC-Q101 Qualified
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