DiodesZetex Dual DMP Type P-Channel MOSFET, 3.1 A, 20 V Enhancement, 6-Pin UDFN-2020 DMP2045UFDB-7
- RS stock no.:
- 222-2852
- Mfr. Part No.:
- DMP2045UFDB-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 184,90
(exc. VAT)
R 212,625
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,725 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.396 | R 184.90 |
| 50 - 75 | R 7.211 | R 180.28 |
| 100 - 225 | R 6.995 | R 174.88 |
| 250 - 975 | R 6.715 | R 167.88 |
| 1000 + | R 6.446 | R 161.15 |
*price indicative
- RS stock no.:
- 222-2852
- Mfr. Part No.:
- DMP2045UFDB-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP | |
| Package Type | UDFN-2020 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.09Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.29W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.75V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP | ||
Package Type UDFN-2020 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.09Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.29W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.75V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
The DiodesZetex Dual P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.
PCB Footprint of 4mm2
Low On-Resistance
Low Input Capacitance
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