DiodesZetex Dual DMN N-Channel MOSFET, 250 mA, 30 V Enhancement, 6-Pin SOT-363 DMN33D8LDWQ-7
- RS stock no.:
- 222-2840
- Mfr. Part No.:
- DMN33D8LDWQ-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 101,83
(exc. VAT)
R 117,10
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 4.073 | R 101.83 |
| 50 - 75 | R 3.971 | R 99.28 |
| 100 - 225 | R 3.852 | R 96.30 |
| 250 - 975 | R 3.698 | R 92.45 |
| 1000 + | R 3.55 | R 88.75 |
*price indicative
- RS stock no.:
- 222-2840
- Mfr. Part No.:
- DMN33D8LDWQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.35W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 2.15mm | |
| Width | 1.3mm | |
| Height | 950μm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, UL 94V-0, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.35W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 2.15mm | ||
Width 1.3mm | ||
Height 950μm | ||
Standards/Approvals J-STD-020, MIL-STD-202, AEC-Q101, UL 94V-0, RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected
Related links
- DiodesZetex Dual DMN N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 DMN3401LDWQ-7
- DiodesZetex Dual DMN N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN62D4LDW-7
- DiodesZetex Dual DMN N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-363 DMN66D0LDWQ-7
- DiodesZetex Dual DMN N-Channel MOSFET 20 V Enhancement, 6-Pin TSOT-26