DiodesZetex DMN Type N-Channel MOSFET, 4.6 A, 30 V Enhancement, 3-Pin X4-DSN DMN3061LCA3-7
- RS stock no.:
- 222-2838
- Mfr. Part No.:
- DMN3061LCA3-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 64,425
(exc. VAT)
R 74,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | R 2.577 | R 64.43 |
| 500 - 975 | R 2.512 | R 62.80 |
| 1000 - 2475 | R 2.437 | R 60.93 |
| 2500 - 4975 | R 2.34 | R 58.50 |
| 5000 + | R 2.246 | R 56.15 |
*price indicative
- RS stock no.:
- 222-2838
- Mfr. Part No.:
- DMN3061LCA3-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN | |
| Package Type | X4-DSN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.88W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.22mm | |
| Standards/Approvals | No | |
| Length | 0.64mm | |
| Width | 1.04 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN | ||
Package Type X4-DSN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.88W | ||
Maximum Operating Temperature 150°C | ||
Height 0.22mm | ||
Standards/Approvals No | ||
Length 0.64mm | ||
Width 1.04 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
Low Qg & Qgd
Small Footprint
Low Profile 0.20mm Height
Totally Lead-Free & Fully RoHS Compliant
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