DiodesZetex Dual 2N7002 Type N-Channel MOSFET, 261 mA, 60 V Enhancement, 6-Pin SOT-363 2N7002DWK-7
- RS stock no.:
- 222-2692
- Mfr. Part No.:
- 2N7002DWK-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 119,10
(exc. VAT)
R 136,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 14,750 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 2.382 | R 119.10 |
| 100 - 200 | R 2.322 | R 116.10 |
| 250 - 450 | R 2.252 | R 112.60 |
| 500 - 950 | R 2.162 | R 108.10 |
| 1000 + | R 2.076 | R 103.80 |
*price indicative
- RS stock no.:
- 222-2692
- Mfr. Part No.:
- 2N7002DWK-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 261mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-363 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 0.33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 0.51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 261mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-363 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 0.33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 0.51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
The DiodesZetex dual N-Channel MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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