onsemi NTTFS N-Channel MOSFET, 37.2 A, 150 V Enhancement, 8-Pin WDFN NTTFS022N15MC
- RS stock no.:
- 221-6750
- Mfr. Part No.:
- NTTFS022N15MC
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 374,61
(exc. VAT)
R 430,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 03 November 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 37.461 | R 374.61 |
| 20 - 90 | R 36.524 | R 365.24 |
| 100 - 240 | R 35.428 | R 354.28 |
| 250 - 490 | R 34.011 | R 340.11 |
| 500 + | R 32.651 | R 326.51 |
*price indicative
- RS stock no.:
- 221-6750
- Mfr. Part No.:
- NTTFS022N15MC
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | WDFN | |
| Series | NTTFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 71.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 800μm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type WDFN | ||
Series NTTFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 71.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 800μm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 3.3x3.3mm flat lead package designed for compact and efficient designs and improves conduction loss.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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