onsemi NTP165N65S Type N-Channel MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 NTP165N65S3H

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Subtotal (1 pack of 2 units)*

R 130,71

(exc. VAT)

R 150,316

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 65.355R 130.71
10 - 98R 63.72R 127.44
100 - 248R 61.81R 123.62
250 - 498R 59.34R 118.68
500 +R 56.965R 113.93

*price indicative

Packaging Options:
RS stock no.:
221-6748
Mfr. Part No.:
NTP165N65S3H
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

NTP165N65S

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

165mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

142W

Typical Gate Charge Qg @ Vgs

35nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

10.67mm

Height

16.3mm

Width

4.7 mm

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 326 pF

100% avalanche tested

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