onsemi NTMFS0D8N Type N-Channel MOSFET, 337 A, 30 V Enhancement, 8-Pin DFN NTMFS0D8N03CT1G
- RS stock no.:
- 221-6728
- Mfr. Part No.:
- NTMFS0D8N03CT1G
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 197,78
(exc. VAT)
R 227,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 19.778 | R 197.78 |
| 20 - 90 | R 19.284 | R 192.84 |
| 100 - 240 | R 18.705 | R 187.05 |
| 250 - 490 | R 17.957 | R 179.57 |
| 500 + | R 17.239 | R 172.39 |
*price indicative
- RS stock no.:
- 221-6728
- Mfr. Part No.:
- NTMFS0D8N03CT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 337A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NTMFS0D8N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Height | 6.3mm | |
| Length | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 337A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NTMFS0D8N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Height 6.3mm | ||
Length 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor 30V of power MOSFET used 337 A of drain current with single N−channel. It improve inrush current management and also improve system efficiency.
Advanced package (5x6mm)
Ultra low RDS(on) to improve system efficiency
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