onsemi NTMFS005N Type N-Channel MOSFET, 105 A, 100 V Enhancement, 5-Pin DFN NTMFS005N10MCLT1G
- RS stock no.:
- 221-6720
- Mfr. Part No.:
- NTMFS005N10MCLT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 229,70
(exc. VAT)
R 264,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- Plus 1,380 left, shipping from 12 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 22.97 | R 229.70 |
| 20 - 90 | R 22.396 | R 223.96 |
| 100 - 240 | R 21.724 | R 217.24 |
| 250 - 490 | R 20.855 | R 208.55 |
| 500 + | R 20.021 | R 200.21 |
*price indicative
- RS stock no.:
- 221-6720
- Mfr. Part No.:
- NTMFS005N10MCLT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMFS005N | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.3mm | |
| Standards/Approvals | Beryllium Free, Pb-Free, RoHS | |
| Height | 6.3mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMFS005N | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Length 5.3mm | ||
Standards/Approvals Beryllium Free, Pb-Free, RoHS | ||
Height 6.3mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The ON Semiconductor industrial power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
Related links
- onsemi NTMFS005N Type N-Channel MOSFET 100 V Enhancement, 5-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFN
- onsemi NTMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H818N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6D1N08H Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H801N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H824N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN
- onsemi NVMFS6H800N Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFN