Infineon StrongIRFET Type N-Channel MOSFET & Diode, 40 A, 40 V Enhancement, 3-Pin ISOMETRIC
- RS stock no.:
- 220-7473
- Mfr. Part No.:
- IRF6613TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 4800 units)*
R 66 676,80
(exc. VAT)
R 76 680,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 4,800 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4800 - 4800 | R 13.891 | R 66,676.80 |
| 9600 - 9600 | R 13.544 | R 65,011.20 |
| 14400 + | R 13.138 | R 63,062.40 |
*price indicative
- RS stock no.:
- 220-7473
- Mfr. Part No.:
- IRF6613TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | ISOMETRIC | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89W | |
| Standards/Approvals | No | |
| Height | 0.68mm | |
| Width | 5.05 mm | |
| Length | 6.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type ISOMETRIC | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89W | ||
Standards/Approvals No | ||
Height 0.68mm | ||
Width 5.05 mm | ||
Length 6.35mm | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High-current rating
Dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1-2 NH) inductance package
Wide availability from distribution partners
Industry standard qualification level
High current carrying capability
Optimum thermal performance
Compact form factor
High efficiency
Environmentally friendly
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