Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263
- RS stock no.:
- 220-7471
- Mfr. Part No.:
- IRF60SC241ARMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 800 units)*
R 31 502,40
(exc. VAT)
R 36 228,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 800 unit(s) shipping from 31 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | R 39.378 | R 31,502.40 |
| 1600 - 1600 | R 38.394 | R 30,715.20 |
| 2400 + | R 37.242 | R 29,793.60 |
*price indicative
- RS stock no.:
- 220-7471
- Mfr. Part No.:
- IRF60SC241ARMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 363A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | StrongIRFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.95mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 311nC | |
| Maximum Power Dissipation Pd | 2.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Width | 9.45 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 363A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series StrongIRFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.95mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 311nC | ||
Maximum Power Dissipation Pd 2.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Width 9.45 mm | ||
Automotive Standard No | ||
The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
Low RDS(on)
High current capability
Industry standard package
Flexible pinout
Optimized for 10 V gate drive
Reduction in conduction losses
Increased power density
Drop in replacement to existing devices
Offers design flexibility
Provides immunity to false turn-on in noisy environments
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