Infineon StrongIRFET Type N-Channel MOSFET & Diode, 363 A, 60 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

R 31 502,40

(exc. VAT)

R 36 228,00

(inc. VAT)

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  • 800 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
800 - 800R 39.378R 31,502.40
1600 - 1600R 38.394R 30,715.20
2400 +R 37.242R 29,793.60

*price indicative

RS stock no.:
220-7471
Mfr. Part No.:
IRF60SC241ARMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

363A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

StrongIRFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.95mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

311nC

Maximum Power Dissipation Pd

2.4W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

4.4mm

Length

10.2mm

Standards/Approvals

No

Width

9.45 mm

Automotive Standard

No

The Infineon latest 60 V Strong IRFET power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.

Low RDS(on)

High current capability

Industry standard package

Flexible pinout

Optimized for 10 V gate drive

Reduction in conduction losses

Increased power density

Drop in replacement to existing devices

Offers design flexibility

Provides immunity to false turn-on in noisy environments

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