Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 220-7458
- Mfr. Part No.:
- IPW65R065C7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 359,47
(exc. VAT)
R 2 713,38
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 210 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | R 78.649 | R 2,359.47 |
| 90 - 120 | R 76.682 | R 2,300.46 |
| 150 + | R 74.382 | R 2,231.46 |
*price indicative
- RS stock no.:
- 220-7458
- Mfr. Part No.:
- IPW65R065C7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
Related links
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