Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 49 A, 700 V Enhancement, 3-Pin TO-252

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2500 units)*

R 52 407,50

(exc. VAT)

R 60 267,50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 - 2500R 20.963R 52,407.50
5000 - 5000R 20.439R 51,097.50
7500 +R 19.826R 49,565.00

*price indicative

RS stock no.:
220-7408
Mfr. Part No.:
IPD65R190C7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS C7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

72mW

Forward Voltage Vf

0.9V

Height

2.41mm

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

650V voltage

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in super junction technology

Improved safety margin and suitable for both SMPS and solar inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Outstanding Cool MOS™ quality

Related links