Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 12 A, 40 V Enhancement, 3-Pin TO-263 IPB015N04NGATMA1
- RS stock no.:
- 220-7374
- Mfr. Part No.:
- IPB015N04NGATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 418,11
(exc. VAT)
R 480,825
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 83.622 | R 418.11 |
| 10 - 95 | R 81.532 | R 407.66 |
| 100 - 245 | R 79.086 | R 395.43 |
| 250 - 495 | R 75.922 | R 379.61 |
| 500 + | R 72.886 | R 364.43 |
*price indicative
- RS stock no.:
- 220-7374
- Mfr. Part No.:
- IPB015N04NGATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS 3 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS 3 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Related links
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