Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

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Subtotal (1 pack of 10 units)*

R 204,78

(exc. VAT)

R 235,50

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 20.478R 204.78
20 - 90R 19.966R 199.66
100 - 240R 19.367R 193.67
250 - 490R 18.592R 185.92
500 +R 17.848R 178.48

*price indicative

Packaging Options:
RS stock no.:
219-5991
Mfr. Part No.:
IPA95R1K2P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

950V

Series

CoolMOS P7

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

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