STMicroelectronics SCTL90N N-Channel MOSFET, 40 A, 650 V, 5-Pin SCTL90N65G2V
- RS stock no.:
- 219-4226P
- Mfr. Part No.:
- SCTL90N65G2V
- Manufacturer:
- STMicroelectronics
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 219-4226P
- Mfr. Part No.:
- SCTL90N65G2V
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
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Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Series | SCTL90N | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 40 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance (Rds) | 0.24 Ω | |
| Mount Type | Surface | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Series SCTL90N | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 40 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Pin Count 5 | ||
Maximum Drain Source Resistance (Rds) 0.24 Ω | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency