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Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247

RS stock no.:: 218-3088
Mfr. Part No.:: IPW60R280P6FKSA1
Manufacturer:: Infineon

Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 822,96

(exc. VAT)

R 946,41

(inc. VAT)

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Units	Per unit	Per Tube*
30 - 60	R 27.432	R 822.96
90 - 120	R 26.746	R 802.38
150 +	R 25.944	R 778.32

*price indicative

RS stock no.:: 218-3088
Mfr. Part No.:: IPW60R280P6FKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13.8A
	Maximum Drain Source Voltage Vds	600V
	Series	CoolMOS P6
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	104W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	16.13mm
	Height	21.1mm
	Width	5.21 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13.8A
	Maximum Drain Source Voltage Vds 600V
	Series CoolMOS P6
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 104W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 16.13mm
	Height 21.1mm
	Width 5.21 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPW60R280P6FKSA1

The Infineon 600V CoolMOS™ P6 series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It is used in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Increased MOSFET dv/dt ruggedness

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247

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