Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

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Subtotal (1 pack of 10 units)*

R 220,15

(exc. VAT)

R 253,17

(inc. VAT)

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  • 19,620 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10R 22.015R 220.15
20 - 90R 21.465R 214.65
100 - 240R 20.821R 208.21
250 - 490R 19.988R 199.88
500 +R 19.188R 191.88

*price indicative

Packaging Options:
RS stock no.:
214-4390
Mfr. Part No.:
IPD70N12S311ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Package Type

TO-252

Series

OptiMOS-T

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

175°C

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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