Infineon OptiMOS-T N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1
- RS stock no.:
- 214-4390
- Mfr. Part No.:
- IPD70N12S311ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
R 215,87
(exc. VAT)
R 248,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,580 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 21.587 | R 215.87 |
| 20 - 90 | R 21.047 | R 210.47 |
| 100 - 240 | R 20.416 | R 204.16 |
| 250 - 490 | R 19.599 | R 195.99 |
| 500 + | R 18.815 | R 188.15 |
*price indicative
- RS stock no.:
- 214-4390
- Mfr. Part No.:
- IPD70N12S311ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.42mm | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type TO-252 | ||
Series OptiMOS-T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.42mm | ||
Height 2.35mm | ||
Length 6.65mm | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.
It is Halogen-free according to IEC61249-2-21
Related links
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