Infineon OptiMOS 3 Type N-Channel MOSFET, 35 A, 200 V N, 8-Pin TDSON BSC350N20NSFDATMA1
- RS stock no.:
- 218-2979
- Mfr. Part No.:
- BSC350N20NSFDATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 207,95
(exc. VAT)
R 239,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 720 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 41.59 | R 207.95 |
| 10 - 95 | R 40.55 | R 202.75 |
| 100 - 245 | R 39.334 | R 196.67 |
| 250 - 495 | R 37.76 | R 188.80 |
| 500 + | R 36.25 | R 181.25 |
*price indicative
- RS stock no.:
- 218-2979
- Mfr. Part No.:
- BSC350N20NSFDATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TDSON | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TDSON | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. It is ideal for high-frequency switching and synchronous rectification.
N-channel, normal level
Very low on-resistance RDS(on)
Pb-free lead plating
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V N, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V N, 8-Pin TDSON BSC059N04LSGATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V N, 8-Pin SuperSO
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V N, 8-Pin SuperSO BSC670N25NSFDATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON BSC093N04LSGATMA1