Infineon HEXFET Type N-Channel MOSFET, 9 A, 40 V Enhancement, 8-Pin SO-8 IRF7469TRPBF

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Subtotal (1 pack of 20 units)*

R 217,08

(exc. VAT)

R 249,64

(inc. VAT)

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  • 4,220 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
20 - 20R 10.854R 217.08
40 - 80R 10.582R 211.64
100 - 220R 10.265R 205.30
240 - 480R 9.854R 197.08
500 +R 9.46R 189.20

*price indicative

Packaging Options:
RS stock no.:
217-2607
Mfr. Part No.:
IRF7469TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

4.9mm

Standards/Approvals

No

Height

1.75mm

Width

3.9 mm

Automotive Standard

No

The Infineon 40V Single N-Channel HEXFET Power MOSFET in a SO-8 package.

Ultra-Low Gate Impedance

Very Low RDS(on)

Fully Characterized Avalanche Voltage and Current

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