Infineon IPP Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 217-2566
- Mfr. Part No.:
- IPP80N06S207AKSA4
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 469,45
(exc. VAT)
R 2 839,85
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | R 49.389 | R 2,469.45 |
| 150 - 200 | R 48.154 | R 2,407.70 |
| 250 + | R 46.709 | R 2,335.45 |
*price indicative
- RS stock no.:
- 217-2566
- Mfr. Part No.:
- IPP80N06S207AKSA4
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon 55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
Related links
- Infineon N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S207AKSA4
- Infineon N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S2L07AKSA2
- Infineon OptiMOS N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S207AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin TO-220 IPP80N06S209AKSA2
- Infineon OptiMOS N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S2H5ATMA2
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S208ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 55 V, 3-Pin D2PAK IPB80N06S2L09ATMA1