Infineon CoolMOS 7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R210CFD7XKSA1

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Subtotal (1 pack of 5 units)*

R 200,16

(exc. VAT)

R 230,185

(inc. VAT)

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Last RS stock
  • Final 355 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 5R 40.032R 200.16
10 - 95R 39.032R 195.16
100 - 245R 37.862R 189.31
250 - 495R 36.348R 181.74
500 +R 34.894R 174.47

*price indicative

Packaging Options:
RS stock no.:
217-2561
Mfr. Part No.:
IPP60R210CFD7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS 7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

64W

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

10.36mm

Standards/Approvals

No

Height

29.95mm

Width

4.57 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.

Ultra-fast body diode

Low gate charge

Best-in-class reverse recovery charge(Qrr)

Improved MOSFET reverse diode dv/dt and diF/dtruggedness

Lowest FOMRDS(on)*Qg and RDS(on)*Eoss

Best-in-class RDS(on)in SMD and THD packages

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