Infineon CoolMOS N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80N04S2H4ATMA2
- RS stock no.:
- 217-2510
- Mfr. Part No.:
- IPB80N04S2H4ATMA2
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 228,63
(exc. VAT)
R 262,925
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,955 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 45.726 | R 228.63 |
| 10 - 95 | R 44.582 | R 222.91 |
| 100 - 245 | R 43.244 | R 216.22 |
| 250 - 495 | R 41.514 | R 207.57 |
| 500 + | R 39.854 | R 199.27 |
*price indicative
- RS stock no.:
- 217-2510
- Mfr. Part No.:
- IPB80N04S2H4ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 129W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.45mm | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 129W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.45mm | ||
Length 10.31mm | ||
Height 4.57mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon 40V, N-Ch, 3.7 mΩ max, Automotive MOSFET, D2PAK, OptiMO.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Ultra low Rds(on)
100% Avalanche tested
Green product (RoHS compliant)
Related links
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