Taiwan Semiconductor TSM025 N-Channel MOSFET, 73 A, 30 V Enhancement, 8-Pin PDFN56 TSM080N03PQ56
- RS stock no.:
- 216-9674
- Mfr. Part No.:
- TSM080N03PQ56
- Manufacturer:
- Taiwan Semiconductor
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 377,20
(exc. VAT)
R 433,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 4,900 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 7.544 | R 377.20 |
| 100 - 200 | R 7.356 | R 367.80 |
| 250 - 450 | R 7.135 | R 356.75 |
| 500 - 950 | R 6.85 | R 342.50 |
| 1000 + | R 6.576 | R 328.80 |
*price indicative
- RS stock no.:
- 216-9674
- Mfr. Part No.:
- TSM080N03PQ56
- Manufacturer:
- Taiwan Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.4nC | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Width | 5mm | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.4nC | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Width 5mm | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Related links
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