Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin PDFN56 TSM055N03PQ56
- RS stock no.:
- 216-9666
- Mfr. Part No.:
- TSM055N03PQ56
- Manufacturer:
- Taiwan Semiconductor
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 571,325
(exc. VAT)
R 657,025
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 1,650 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 22.853 | R 571.33 |
| 50 - 75 | R 22.282 | R 557.05 |
| 100 - 225 | R 21.613 | R 540.33 |
| 250 - 975 | R 20.749 | R 518.73 |
| 1000 + | R 19.919 | R 497.98 |
*price indicative
- RS stock no.:
- 216-9666
- Mfr. Part No.:
- TSM055N03PQ56
- Manufacturer:
- Taiwan Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 11.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 74W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Width | 5 mm | |
| Height | 1.1mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 11.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 74W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Width 5 mm | ||
Height 1.1mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Halogen-free according to IEC 61249-2-21
Related links
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