Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7831TRPBF
- RS stock no.:
- 215-2586
- Mfr. Part No.:
- IRF7831TRPBF
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 420,60
(exc. VAT)
R 483,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 520 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 21.03 | R 420.60 |
| 40 - 80 | R 20.504 | R 410.08 |
| 100 - 220 | R 19.889 | R 397.78 |
| 240 - 480 | R 19.094 | R 381.88 |
| 500 + | R 18.33 | R 366.60 |
*price indicative
- RS stock no.:
- 215-2586
- Mfr. Part No.:
- IRF7831TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application high frequency point-of-load synchronous buck converter for applications in networking & computing systems.
RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
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