Infineon CoolMOS P7 N-Channel MOSFET, 6 A, 600 V Enhancement, 3-Pin TO-220 IPP60R600P7XKSA1
- RS stock no.:
- 215-2546
- Mfr. Part No.:
- IPP60R600P7XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 189,11
(exc. VAT)
R 217,48
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 18.911 | R 189.11 |
| 20 - 90 | R 18.438 | R 184.38 |
| 100 - 240 | R 17.885 | R 178.85 |
| 250 - 490 | R 17.17 | R 171.70 |
| 500 + | R 16.483 | R 164.83 |
*price indicative
- RS stock no.:
- 215-2546
- Mfr. Part No.:
- IPP60R600P7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.
Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
Excellent ESD robustness >2kV(HBM) for all products
Significant reduction of switching and conduction losses
Wide portfolio in through hole and surface mount packages
Related links
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