Infineon OptiMOS Type N-Channel MOSFET, 47 A, 60 V Enhancement, 8-Pin SuperSO BSC094N06LS5ATMA1

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Subtotal (1 pack of 20 units)*

R 323,14

(exc. VAT)

R 371,62

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 16.157R 323.14
40 - 80R 15.753R 315.06
100 - 220R 15.28R 305.60
240 - 480R 14.669R 293.38
500 +R 14.082R 281.64

*price indicative

Packaging Options:
RS stock no.:
215-2465
Mfr. Part No.:
BSC094N06LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

SuperSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

36W

Typical Gate Charge Qg @ Vgs

9.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Low R DS(on) in small package

Low gate charge

Lower output charge

Logic level compatibility

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