Infineon OptiMOS Type N-Channel MOSFET, 95 A, 80 V Enhancement, 8-Pin SuperSO BSC052N08NS5ATMA1
- RS stock no.:
- 215-2461
- Mfr. Part No.:
- BSC052N08NS5ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 231,04
(exc. VAT)
R 265,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 23.104 | R 231.04 |
| 20 - 90 | R 22.526 | R 225.26 |
| 100 - 240 | R 21.85 | R 218.50 |
| 250 - 490 | R 20.976 | R 209.76 |
| 500 + | R 20.137 | R 201.37 |
*price indicative
- RS stock no.:
- 215-2461
- Mfr. Part No.:
- BSC052N08NS5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SuperSO | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SuperSO | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOSTM5Power-Transistor has 80V maximum drain source voltage with SuperSO8 5x6 package type. It has potential application as telecom server, solar, low voltage drives, light electric vehicles and adapter. It is Optimized for high performance SMPS, e.g. sync .rec and superior thermal resistance.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
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