Infineon OptiMOS P3 Type P-Channel MOSFET, 39.6 A, 30 V Enhancement, 8-Pin TSDSON BSZ180P03NS3GATMA1
- RS stock no.:
- 214-8990
- Mfr. Part No.:
- BSZ180P03NS3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
R 593,95
(exc. VAT)
R 683,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 11.879 | R 593.95 |
| 100 - 100 | R 11.582 | R 579.10 |
| 150 - 200 | R 11.235 | R 561.75 |
| 250 - 450 | R 10.786 | R 539.30 |
| 500 + | R 10.354 | R 517.70 |
*price indicative
- RS stock no.:
- 214-8990
- Mfr. Part No.:
- BSZ180P03NS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | OptiMOS P3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series OptiMOS P3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS single P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, battery management and load switching.
It has 150 °C operating temperature
Qualified according to JEDEC for target applications
Related links
- Infineon OptiMOS P3 Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3GATMA1
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR610EP-T1-RE3
- Vishay Type N-Channel MOSFET 30 V Depletion, 8-Pin PowerPAK SO-8DC
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON