onsemi NTPF Type N-Channel MOSFET, 11 A, 800 V Enhancement, 3-Pin TO-220 NTPF450N80S3Z
- RS stock no.:
- 214-8915
- Mfr. Part No.:
- NTPF450N80S3Z
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 157,36
(exc. VAT)
R 180,965
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,985 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 31.472 | R 157.36 |
| 10 - 10 | R 30.686 | R 153.43 |
| 15 - 15 | R 29.766 | R 148.83 |
| 20 - 20 | R 28.576 | R 142.88 |
| 25 + | R 27.432 | R 137.16 |
*price indicative
- RS stock no.:
- 214-8915
- Mfr. Part No.:
- NTPF450N80S3Z
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | NTPF | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 29.5W | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.53mm | |
| Width | 15.75 mm | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series NTPF | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 29.5W | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.53mm | ||
Width 15.75 mm | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Automotive Standard No | ||
The ON Semiconductor is high performance MOSFET family offering 800 V breakdown voltage. It is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance.
ESD Improved capability with zener diode
RoHS Compliant
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