Infineon HEXFET Type P-Channel MOSFET, 20 A, 55 V, 3-Pin TO-252 IRLR9343TRPBF
- RS stock no.:
- 214-4474
- Mfr. Part No.:
- IRLR9343TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 215,98
(exc. VAT)
R 248,38
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 10.799 | R 215.98 |
| 40 - 80 | R 10.529 | R 210.58 |
| 100 - 220 | R 10.213 | R 204.26 |
| 240 - 480 | R 9.804 | R 196.08 |
| 500 + | R 9.412 | R 188.24 |
*price indicative
- RS stock no.:
- 214-4474
- Mfr. Part No.:
- IRLR9343TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
It has repetitive Avalanche Capability for Robustness and Reliability
Related links
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252 AUIRFR5305TRL
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252 IRFR5505TRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IRF9Z34NSTRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252