Infineon HEXFET Type N-Channel MOSFET, 200 A, 40 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

R 12 787,20

(exc. VAT)

R 14 705,60

(inc. VAT)

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  • 5,600 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
800 - 800R 15.984R 12,787.20
1600 - 1600R 15.584R 12,467.20
2400 +R 15.117R 12,093.60

*price indicative

RS stock no.:
214-4467
Mfr. Part No.:
IRL1404ZSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.9mΩ

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

It is lead-free

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