Infineon OptiMOS 3 Type N-Channel MOSFET, 70 A, 40 V N, 3-Pin TO-220 IPA041N04NGXKSA1
- RS stock no.:
- 214-4350
- Mfr. Part No.:
- IPA041N04NGXKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
R 128,22
(exc. VAT)
R 147,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 8.548 | R 128.22 |
| 30 - 75 | R 8.334 | R 125.01 |
| 90 - 225 | R 8.084 | R 121.26 |
| 240 - 465 | R 7.761 | R 116.42 |
| 480 + | R 7.45 | R 111.75 |
*price indicative
- RS stock no.:
- 214-4350
- Mfr. Part No.:
- IPA041N04NGXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 16.15 mm | |
| Height | 4.85mm | |
| Length | 10.68mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 16.15 mm | ||
Height 4.85mm | ||
Length 10.68mm | ||
Automotive Standard No | ||
This Infineon OptiMOS 3 MOSFET features not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.
It is Halogen-free according to IEC61249-2-21
Related links
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