DiodesZetex DMT35M4LFVW Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerDI3333 DMT35M4LFVW-7
- RS stock no.:
- 213-9206
- Mfr. Part No.:
- DMT35M4LFVW-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 238,00
(exc. VAT)
R 273,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,975 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.52 | R 238.00 |
| 50 - 75 | R 9.282 | R 232.05 |
| 100 - 225 | R 9.004 | R 225.10 |
| 250 - 975 | R 8.644 | R 216.10 |
| 1000 + | R 8.298 | R 207.45 |
*price indicative
- RS stock no.:
- 213-9206
- Mfr. Part No.:
- DMT35M4LFVW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI3333 | |
| Series | DMT35M4LFVW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 16.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Height | 0.85mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI3333 | ||
Series DMT35M4LFVW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 16.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Height 0.85mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMT35M4LFVW series is N-channel MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
100% Unclamped Inductive Switching
Test in production – ensures more reliable and robust end application
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