DiodesZetex DMN3069L Type N-Channel MOSFET, 5.4 A, 30 V Enhancement, 3-Pin SOT-23 DMN3069L-7
- RS stock no.:
- 213-9184
- Mfr. Part No.:
- DMN3069L-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 163,40
(exc. VAT)
R 187,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 37,600 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 1.634 | R 163.40 |
| 200 - 200 | R 1.593 | R 159.30 |
| 300 - 400 | R 1.546 | R 154.60 |
| 500 - 900 | R 1.484 | R 148.40 |
| 1000 + | R 1.424 | R 142.40 |
*price indicative
- RS stock no.:
- 213-9184
- Mfr. Part No.:
- DMN3069L-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | DMN3069L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series DMN3069L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN3061SWQ series is N-channel MOSFET. It is used in general purpose interfacing switch, power management functions and analogue switch.
Low input capacitance
Fast switching speed
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