DiodesZetex DMN10H220LFDF Type N-Channel MOSFET, 2.2 A, 100 V Enhancement, 6-Pin UDFN DMN10H220LFDF-7
- RS stock no.:
- 213-9152
- Mfr. Part No.:
- DMN10H220LFDF-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
R 54,95
(exc. VAT)
R 63,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 1.099 | R 54.95 |
| 100 - 200 | R 1.072 | R 53.60 |
| 250 - 450 | R 1.04 | R 52.00 |
| 500 - 950 | R 0.998 | R 49.90 |
| 1000 + | R 0.958 | R 47.90 |
*price indicative
- RS stock no.:
- 213-9152
- Mfr. Part No.:
- DMN10H220LFDF-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | UDFN | |
| Series | DMN10H220LFDF | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 225mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 1.1W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Height | 0.63mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type UDFN | ||
Series DMN10H220LFDF | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 225mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 1.1W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Height 0.63mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN10H220LFDF series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
Low input capacitance
Fast switching speed
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